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[转帖]張航之四兒---Kuan-Chang Chang(張冠張)個人學術檔案

Kuan-Chang Chang(張冠張)

Department of Materials and Optoelectronic Science, National Sun Yat-Sen University

Resistance Random Access Memory(RRAM), Device Physics, Supercritical Fluid

在 student.nsysu.edu.tw 的電子郵件地址已通過驗證


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引文指數
全部 自 2010 年
引文
821 803
H 指數
18 18
i10 指數
27 26
201020112012201320142015
132348235311168
共同作者查看所有共同作者…
• Yao-Feng Chang


標題1–91
引用次數 年份

Redox Reaction Switching Mechanism in RRAM Device With Structure
YE Syu, TC Chang, TM Tsai, YC Hung, KC Chang, MJ Tsai, MJ Kao, ...
Electron Device Letters, IEEE 32 (4), 545-547
77
2011
A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid
MC Chen, TC Chang, SY Huang, KC Chang, HW Li, SC Chen, J Lu, Y Shi
Applied Physics Letters 94 (16)
52
2009
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
KC Chang, TM Tsai, TC Chang, YE Syu, CC Wang, SL Chuang, CH Li, ...
Applied Physics Letters 99 (26), 263501
39
2011
The effect of silicon oxide based RRAM with tin doping
KC Chang, TM Tsai, TC Chang, YE Syu, SL Chuang, CH Li, DS Gan, ...
Electrochemical and Solid-State Letters 15 (3), H65-H68
33
2011
Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices
KC Chang, R Zhang, TC Chang, TM Tsai, JC Lou, JH Chen, TF Young, ...
Electron Device Letters, IEEE 34 (5), 677-679
31
2013
Bipolar resistive RAM characteristics induced by nickel incorporated into silicon oxide dielectrics for IC applications
TM Tsai, KC Chang, TC Chang, YE Syu, SL Chuang, GW Chang, GR Liu, ...
Electron Device Letters, IEEE 33 (12), 1696-1698
29
2012
miR-29 targets Akt3 to reduce proliferation and facilitate differentiation of myoblasts in skeletal muscle development
W Wei, HB He, WY Zhang, HX Zhang, JB Bai, HZ Liu, JH Cao, KC Chang, ...
Cell death & disease 4 (6), e668
28
2013
Atomic-level quantized reaction of HfOx memristor
YE Syu, TC Chang, JH Lou, TM Tsai, KC Chang, MJ Tsai, YL Wang, M Liu, ...
Applied Physics Letters 102 (17), 172903
28
2013
A comparative study of the bactericidal effect of photocatalytic oxidation by TiO2 on antibiotic‐resistant and antibiotic‐sensitive bacteria
TM Tsai, HH Chang, KC Chang, YL Liu, CC Tseng
Journal of chemical technology and biotechnology 85 (12), 1642-1653
28
2010
Characteristics and mechanisms of silicon-oxide-based resistance random access memory
KC Chang, TM Tsai, TC Chang, HH Wu, JH Chen, YE Syu, GW Chang, ...
Electron Device Letters, IEEE 34 (3), 399-401
26
2013
Silicon introduced effect on resistive switching characteristics of WOX thin films
YE Syu, TC Chang, TM Tsai, GW Chang, KC Chang, YH Tai, MJ Tsai, ...
Applied Physics Letters 100 (2), 022904
26
2012
Senior Member IEEE
KC Chang, TM Tsai, TC Chang
Wu HH, Chen KH, Chen JH, Young TF, Chu TJ, Chen JY, Pan CH, Su YT, Syu YE ...
25
2013
Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical Fluid Treatment
TM Tsai, KC Chang, TC Chang, GW Chang, YE Syu, YT Su, GR Liu, ...
Electron Device Letters, IEEE 33 (12), 1693-1695
25
2012
Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
TM Tsai, KC Chang, TC Chang, YE Syu, KH Liao, BH Tseng, SM Sze
Applied Physics Letters 101 (11), 112906
25
2012
Electrical conduction mechanism of Zn: SiOx resistance random access memory with supercritical CO2 fluid process
KC Chang, TM Tsai, R Zhang, TC Chang, KH Chen, JH Chen, TF Young, ...
Applied Physics Letters 103 (, 083509
22
2013
Asymmetric Carrier Conduction Mechanism by Tip Electric Field in Resistance Switching Device
YE Syu, TC Chang, TM Tsai, GW Chang, KC Chang, JH Lou, YH Tai, ...
Electron Device Letters, IEEE 33 (3), 342-344
21
2012
Performance and characteristics of double layer porous silicon oxide resistance random access memory
TM Tsai, KC Chang, R Zhang, TC Chang, JC Lou, JH Chen, TF Young, ...
Applied Physics Letters 102 (25), 253509
19
2013
Charge quantity influence on resistance switching characteristic during forming process
TJ Chu, TC Chang, TM Tsai, HH Wu, JH Chen, KC Chang, TF Young, ...
Electron Device Letters, IEEE 34 (4), 502-504
19
2013
Low Temperature Improvement Method on Resistive Random Access Memory Devices
KC Chang, TM Tsai, TC Chang, HH Wu, KH Chen, JH Chen, TF Young, ...
Electron Device Letters, IEEE 34 (4), 511-513
17
2013
Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO 2 fluid treatment
KC Chang, CH Pan, TC Chang, TM Tsai, R Zhang, JC Lou, TF Young, ...
Electron Device Letters, IEEE 34 (5), 617-619
16
2013
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
YT Su, KC Chang, TC Chang, TM Tsai, R Zhang, JC Lou, JH Chen, ...
Applied Physics Letters 103 (16), 163502
15
2013
Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress
GW Chang, TC Chang, JC Jhu, TM Tsai, YE Syu, KC Chang, YH Tai, ...
Applied Physics Letters 100 (1, 182103
15
2012
Low-temperature synthesis of ZnO nanotubes by supercritical CO2 fluid treatment
KC Chang, TM Tsai, TC Chang, YE Syu, HC Huang, YC Hung, TF Young, ...
Electrochemical and Solid-State Letters 14 (9), K47-K50
13
2011
Endurance Improvement Technology With Nitrogen Implanted in the Interface of Resistance Switching Device
YE Syu, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ...
Electron Device Letters, IEEE 34 (7), 864-866
11
2013
Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors
KH Liu, TC Chang, KC Chang, TM Tsai, TY Hsieh, MC Chen, BL Yeh, ...
Applied Physics Letters 104 (10), 103501
10
2014
Improving resistance switching characteristics with SiGeOx/SiGeON double layer for nonvolatile memory applications
YE Syu, TC Chang, CT Tsai, GW Chang, TM Tsai, KC Chang, YH Tai, ...
Electrochemical and Solid-State Letters 14 (10), H419-H421
10
2011
Safety and outcomes of short-term multiple femoral venous sheath placement in cardiac electrophysiological study and radiofrequency catheter ablation
JY Chen, KC Chang, YC Lin, HT Chou, JS Hung
Japanese heart journal 45 (2), 257-264
10
2004
Tri-resistive switching behavior of hydrogen induced resistance random access memory
TJ Chu, TM Tsai, TC Chang, KC Chang, R Zhang, KH Chen, JH Chen, ...
Electron Device Letters, IEEE 35 (2), 217-219
9
2014
Improvement mechanism of resistance random access memory with supercritical CO 2 fluid treatment
KC Chang, JH Chen, TM Tsai, TC Chang, SY Huang, R Zhang, KH Chen, ...
The Journal of Supercritical Fluids 85, 183-189
9
2014
Dual ion effect of the lithium silicate resistance random access memory
KC Chang, TM Tsai, TC Chang, KH Chen, R Zhang, ZY Wang, JH Chen, ...
Electron Device Letters, IEEE 35 (5), 530-532
8
2014
Integrated One Diode–One Resistor Architecture in Nanopillar SiO x Resistive Switching Memory by Nanosphere Lithography
L Ji, YF Chang, B Fowler, YC Chen, TM Tsai, KC Chang, MC Chen, ...
Nano letters 14 (2), 813-818
8
2013
High performance of graphene oxide-doped silicon oxide-based resistance random access memory
R Zhang, KC Chang, TC Chang, TM Tsai, KH Chen, JC Lou, JH Chen, ...
Nanoscale research letters 8 (1), 1-6
8
2013
Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors
GW Chang, TC Chang, YE Syu, TM Tsai, KC Chang, CH Tu, FY Jian, ...
Thin Solid Films 520 (5), 1608-1611
8
2011
Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment
MC Chen, TC Chang, SY Huang, KC Chang, HC Huang, SC Chen, J Lu, ...
Surface and Coatings Technology 204 (6), 1112-1115
8
2009
Mechanism of power consumption inhibitive multi-layer Zn: SiO2/SiO2 structure resistance random access memory
R Zhang, TM Tsai, TC Chang, KC Chang, KH Chen, JC Lou, TF Young, ...
Journal of Applied Physics 114 (23), 234501
7
2013
The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
JW Huang, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ...
Applied Physics Letters 102 (20), 203507
7
2013
Characterization of oxygen accumulation in indium-tin-oxide for resistance random access memory
R Zhang, KC Chang, TC Chang, TM Tsai, SY Huang, WJ Chen, KH Chen, ...
Electron Device Letters, IEEE 35 (6), 630-632
6
2014
Space electric field concentrated effect for Zr: SiO2 RRAM devices using porous SiO2 buffer layer
KC Chang, J Huang, TC Chang, TM Tsai, KH Chen, TF Young, JH Chen, ...
Nanoscale research letters 8 (1), 1-5
6
2013
The resistive switching characteristics in TaON films for nonvolatile memory applications
MC Chen, TC Chang, YC Chiu, SC Chen, SY Huang, KC Chang, TM Tsai, ...
Thin Solid Films 528, 224-228
6
2013
Distally based anteromedial thigh fasciocutaneous island flap for patellar soft tissue reconstruction
LS Chou, KC Chang, TW Lin, HC Chou
Journal of Trauma and Acute Care Surgery 66 (4), 1146-1151
6
2009
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
YJ Chen, HL Chen, TF Young, TC Chang, TM Tsai, KC Chang, R Zhang, ...
Nanoscale research letters 9 (1), 1-5
5
2014
Resistive switching modification by ultraviolet illumination in transparent electrode resistive random access memory
CC Shih, KC Chang, TC Chang, TM Tsai, R Zhang, JH Chen, KH Chen, ...
Electron Device Letters, IEEE 35 (6), 633-635
5
2014
Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon
C Ye, C Zhan, TM Tsai, KC Chang, MC Chen, TC Chang, T Deng, ...
Applied Physics Express 7 (3), 034101
5
2014
Resistance switching induced by hydrogen and oxygen in diamond-like carbon memristor
YJ Chen, KC Chang, TC Chang, HL Chen, TF Young, TM Tsai, R Zhang, ...
Electron Device Letters, IEEE 35 (10), 1016-1018
4
2014
Mechanical stress influence on electronic transport in low-k SiOC dielectric single damascene capacitor
YL Yang, TF Young, TC Chang, FY Shen, JH Hsu, TM Tsai, KC Chang, ...
Applied Physics Letters 102 (19), 192912
4
2013
Hopping conduction distance dependent activation energy characteristics of Zn: SiO2 resistance random access memory devices
KH Chen, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ...
Applied Physics Letters 102 (13), 133503
4
2013
Conjugated polymer mediated synthesis of nanoparticle clusters and core/shell nanoparticles
P Xu, K Chang, YI Park, B Zhang, L Kang, Y Du, RS Iyer, HL Wang
Polymer 54 (2), 485-489
4
2013
Abnormal subthreshold leakage current at high temperature in InGaZnO thin-film transistors
GW Chang, TC Chang, JC Jhu, TM Tsai, YE Syu, KC Chang, YH Tai, ...
Electron Device Letters, IEEE 33 (4), 540-542
4
2012
Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor
H Chen, TC Chang, TF Young, TM Tsai, KC Chang, R Zhang, SY Huang, ...
Applied Physics Letters 104 (24), 243508
3
2014
Analysis of the Reasons of the Hydraulic Impact and the Measures of Decrease and Elimination [J]
SQ Hou, JS Cheng, LL Zhang
Coal Mine Machinery 5, 071
3
2005
Temperature-dependent instability of bias stress in InGaZnO thin-film transistors
GW Chang, TC Chang, JC Jhu, TM Tsai, KC Chang, YE Syu, YH Tai, ...
Electron Devices, IEEE Transactions on 61 (6), 2119-2124
2
2014
Mechanical Stress Influence on Electronic Transport in Low-SiOC Dielectric Dual Damascene Capacitor
YL Yang, TF Young, TC Chang, JH Hsu, TM Tsai, FY Jian, KC Chang
Electron Device Letters, IEEE 34 (, 1056-1058
2
2013
Secondary development on three-dimensional modeling of AutoCAD [J]
L CAO, X XIAO, J CHENG, D LIU
Coal Mine Machinery 12, 045
2
2004
Physical and chemical mechanisms in oxide-based resistance random access memory
KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ...
Nanoscale research letters 10 (1), 1-27
1
2015
Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory
TJ Chu, TM Tsai, TC Chang, KC Chang, CH Pan, KH Chen, JH Chen, ...
Applied Physics Letters 105 (22), 223514
1
2014
Controllable Set Voltage in Bilayer ZnO: SiO 2/ZnO x Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation
X Huang, KC Chang, TC Chang, TM Tsai, CC Shih, R Zhang, SY Huang, ...
Electron Device Letters, IEEE 35 (12), 1227-1229
1
2014
N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
JC Jhu, TC Chang, GW Chang, YE Syu, TM Tsai, FY Jian, KC Chang, ...
ECS Transactions 45 (7), 169-178
1
2012
Genetic polymorphisms and haplotype structures of HSPA5 gene in the Han population of Southern China
X Zhu, J Cheng, J Zhao, L Chen, S Hou, G Zhao, F Lan, W Wang, H Kung, ...
Tissue antigens 74 (5), 420-423
1
2009
Relation Between Walking Hydraulic Motor's Displacement and Turning Angle [J]
CY Li, DB Liu, JS Cheng
Coal Mine Machinery 4, 023
1
2006
Application of Hydraulic Drive and Control in Walking System of Coal Vehicle [J]
DB Liu, CY Li, LM Cao, JS Cheng
Coal Mine Machinery 1, 070
1
2006
Designment of Three Working Position Switch Operating Machine
DM Li, GX Su, M Chen, JS Cheng
Meikuang Jixie(Coal Mine Machinery), 33-34
1
2005
Improvement of Resistive Switching Characteristic in Silicon Oxide Based RRAM through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid
KC Chang, TM Tsai, TC Chang, R Zhang, KH Chen, JH Chen, MC Chen, ...
IEEE

2015
Mechanism of triple ions effect in GeSO resistance random access memory
W Zhang, Y Hu, TC Chang, TM Tsai, KC Chang, HL Chen, YT Su, ...
IEEE

2015
Effects of Varied Negative Stop Voltages on Current Self-compliance in Indium Tin Oxide Resistance Random Access Memory
C Lin, KC Chang, TC Chang, TM Tsai, JH Pan, R Zhang, KH Liu, ...
IEEE

2015
Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
YT Tseng, TM Tsai, TC Chang, CC Shih, KC Chang, R Zhang, KH Chen, ...
Applied Physics Letters 106 (21), 213505

2015
The Manipulation of Temperature Coefficient Resistance of TaN Thin-Film Resistor by Supercritical CO 2 Fluid
HR Chen, YC Chen, TC Chang, KC Chang, TM Tsai, TJ Chu, CC Shih, ...
Electron Device Letters, IEEE 36 (3), 271-273

2015
Hopping conduction properties of the Sn: SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure
KH Chen, KC Chang, TC Chang, TM Tsai, KH Liao, YE Syu, SM Sze
Applied Physics A 119 (4), 1609-1613

2015
High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protect ive compliance current structure
KC Chang, R Zhang, TC Chang, TM Tsai, TJ Chu, HL Chen, CC Shih, ...
Electron Devices Meeting (IEDM), 2014 IEEE International, 33.3. 1-33.3. 4

2014
Separate Clock Network Voltage for Correcting Random Errors in ULV Clocked Storage Cells
SC Luo, KC Chang, MP Chen, CJ Huang, YF Chiu, PH Chen, LC Cheng, ...
Circuits and Systems II: Express Briefs, IEEE Transactions on 61 (12), 947-951

2014
High-performance HfO2/ZrO2/IGZO thin-film transistors deposited using atmospheric pressure plasma jet
CH Wu, KM Chang, HY Hsu
Electronics Letters 50 (23), 1747-1749

2014
Study on Supercritical Fluids and Resistance Random Access Memory
KC Chang
2014
Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography
L Ji, YF Chang, B Fowler, YC Chen, TM Tsai, KC Chang, MC Chen, ...
Device Research Conference (DRC), 2014 72nd Annual, 243-244

2014
High-density nano-pillar SiO x-based resistive switching memory using nano-sphere lithography to fabricate a one diode-one resistor (1D-1R) architecture
YF Chang, L Ji, YC Chen, F Zhou, TM Tsai, KC Chang, MC Chen, ...
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of ...

2014
Surface scattering mechanisms of tantalum nitride thin film resistor
HR Chen, YC Chen, TC Chang, KC Chang, TM Tsai, TJ Chu, CC Shih, ...
Nanoscale research letters 9 (1), 1-5

2014
Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices
MC Chen, TC Chang, YC Chiu, SC Chen, SY Huang, YE Syu, KC Chang, ...
ECS Transactions 53 (29), 1-7

2013
N 2 O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors
GW Chang, TC Chang, JC Jhu, TM Tsai, YE Syu, KC Chang, FY Jian, ...
Surface and Coatings Technology 231, 281-284

2013
[Recent progress in the genotyping studies of Mycobacterium tuberculosis].
Y Liu, J Cheng, CY Li
Zhonghua jie he he hu xi za zhi= Zhonghua jiehe he huxi zazhi= Chinese ...

2013
N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
JC Jhu, TC Chang, GW Chang, TM Tsai, YE Syu, FY Jian, KC Chang, ...
ECS Transactions 45 (31), 47-55

2013
Improvement of Resistance Switching Behavior by Localizing Filament with Si Injection WOX Switching Layer
SY Huang, TC Chang, YE Syu, YC Hung, KC Chang, MC Chen, TM Tsai, ...
Meeting Abstracts, 77-77

2013
Self-Rectification Resistance Switching Memory Device with Bipolar Operation Mode
GW Chang, TC Chang, YE Syu, KC Chang, TM Tsai, YH Tai
Meeting Abstracts, 777-777

2013
Electric Characteristic Study and Characteristic Analysis for Flexible Photoelectric Thin Films and Devices
GW Chang, TC Chang, KC Chang, TM Tsai, YE Syu, YH Tai, MC Wang, ...
Meeting Abstracts, 612-612

2013
Temperature Dependent Instability of Drain Bias Stress in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
GW Chang, TC Chang, YE Syu, JC Jhu, KC Chang, TM Tsai, YH Tai
Meeting Abstracts, 928-928

2013
Hematopathologic Discrepancy between Submitted and Review Diagnoses
KC Chang, C Chang, SW Huang, D Jones
LABORATORY INVESTIGATION 93, 323A-323A

2013
Resistive random access memory, controlling method and manufacturing method therefor
TC Chang, C Min-Chen, YE Syu, K Chang, FY Jian
US Patent App. 13/690,250

2012
Nanostructured Materials, Carbon Nanotubes, and Fullerenes-Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment
KC Chang, TM Tsai, TC Chang, YE Syu, HC Huang, YC Hung, TF Young, ...
IEEE-ECS Electrochemical and Solid State Letters 14 (9), K47

2011
Growth of ZnO Nanotubes by CO2 Supercritical Fluid Treatment at Low-Temperature
K Chang
2009
Experimental study on target treatments of nasopharyngeal carcinoma using^ 1^ 8^ 8Re-BAC~ 5 combined with PYM-BAC~ 5
J Cheng, Z Liang, X Xiao
CHINESE JOURNAL OF NUCLEAR MEDICINE 28 (1), 31

2008
Available online at www. sciencedirect. com
S Akaho, Y Nishimori, S Amari, S Fiori, N Arana-Daniel, ...
Neurocomputing 67, 465-467

2005
Immediate Postcraniotomy Status Epilepticus in Renal Failure Patients with Subdural Hemorrhage-Report of Two Cases
KN Liu, JS Huang, KC Chang
JOURNAL-SURGICAL ASSOCIATION REPUBLIC OF CHINA 30, 215-218

1997
PREPARATION OF SUPER-HYDROPHOBIC FILM BY FLUORINE-POLYMER
KC Chang, H Chen, CK Huang, SI Huang

氧化矽基電阻式記憶體
TC Chang, TM Tsai, KC Chang, TJ Chu, YE Syn

返回學術檔案
Kuan-Chang Chang(張冠張)的共同作者

Kuan-Chang Chang(張冠張)

Yao-Feng Chang
The University of Texas at Austin
在 utexas.edu 的電子郵件地址已通過驗證
被引用 256 次
SiOx-Based Resistive Switching Memory.
日期及引用次數是由電腦程式自動估算而得。

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http://blog.xuite.net/changhangming1234/twblog/380237756

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